Front illuminated back side contact thin wafer detectors

ABSTRACT

The present invention is directed toward a detector structure, detector arrays, a method of detecting incident radiation, and a method of manufacturing the detectors. The present invention comprises several embodiments that provide for reduced radiation damage susceptibility, decreased affects of cross-talk, and increased flexibility in application. In one embodiment, the present invention comprises a plurality of front side illuminated photodiodes, optionally organized in the form of an array, with both the anode and cathode contact pads on the back side. The front side illuminated, back side contact photodiodes have superior performance characteristics, including less radiation damage, less crosstalk using a suction diode, and reliance on reasonably thin wafers. Another advantage of the photodiodes of the present invention is that high density with high bandwidth applications can be effectuated.

CROSS REFERENCE TO RELATED APPLICATIONS

This invention relies on, for priority, U.S. Provisional Application60/468,181, having a priority date of May 5, 2003, entitled “DETECTORSWITH IMPROVED RADIATION DAMAGE AND CROSSTALK CHARACTERISTICS”.

FIELD OF THE INVENTION

The present invention pertains generally to the field of radiationdetectors, and in particular, relates to radiation detectorsmanufactured with thinner wafers, thereby yielding reduced crosstalkbetween detecting regions and decreased susceptibility to radiationdamage, and with contacts extending from a front surface to a backsurface, thereby permitting higher photodiode density applications.

BACKGROUND OF THE INVENTION

Arrays of photosensitive diodes are used in an assortment ofapplications including, but not limited to, radiation detection, opticalposition encoding, and low light-level imaging, such as nightphotography, nuclear medical imaging, photon medical imaging,multi-slice computer tomography (CT) imaging, and ballistic photondetection etc. Typically, photodiode arrays may be formed as one- ortwo-dimensional arrays of aligned photodiodes, or, for optical shaftencoders, a circular or semicircular arrangement of diodes.

One problem with detection devices is that they are susceptible tovarious radiation damage mechanisms, such as displacement damageresulting in total dose effects and ionization damage resulting in bulkeffects. Both mechanisms adversely affect the performance of detectors,transistors and integrated circuits.

Certain detector characteristics that are most affected include detectorleakage current, doping characteristics, charge collection, and carrierlifetime. Over time, detectors show an increased reverse-bias currentand increased forward voltage drop due to radiation damage. Further, achange in doping level, due to radiation damage, adversely affects thewidth of the depletion region, i.e. the voltage required for fulldepletion and a decrease in carrier lifetime results in signal loss ascarriers recombine while traversing the depletion region.

Another disadvantage with conventional detection devices is the amountand extent of crosstalk that occurs between adjacent detectorstructures, primarily as a result of minority carrier leakage currentbetween diodes. The problem of crosstalk between diodes becomes evenmore acute as the size of detector arrays, the size of individualdetectors, the spatial resolution, and the spacing of diodes arereduced.

In certain applications, it is desirable to produce optical detectorshaving small lateral dimensions and spaced closely together. For examplein certain medical applications, it would beneficial to increase theoptical resolution of a detector array in order to permit for improvedimage scans, such as computer tomography scans. However, at conventionaldoping levels utilized for diode arrays of this type, the diffusionlength of minority carriers generated by photon interaction in thesemiconductor is in the range of at least many tens of microns, and suchminority carriers have the potential to affect signals at diodes awayfrom the region at which the minority carriers were generated.Therefore, the spatial resolution obtainable may be limited by diffusionof the carriers within the semiconductor itself, even if othercomponents of the optical system are optimized and scattered light isreduced. Additionally, conventional front surface contact photodiodesrequire greater space devoted to electrical contacts and, therefore,limit the density of photodiodes in a given application.

Various approaches have been used to minimize such crosstalk including,but not limited to, providing inactive photodiodes to balance theleakage current, as described in U.S. Pat. Nos. 4,904,861 and 4,998,013to Epstein et al., the utilization of suction diodes for the removal ofthe slow diffusion currents to reduce the settling time of detectors toacceptable levels, as described in U.S. Pat. No. 5,408,122, andproviding a gradient in doping density in the epitaxial layer, asdescribed in U.S. Pat. No. 5,430,321 to Effelsberg.

Additionally, certain applications require the placement of electricalcontacts in a manner that does not obstruct an illuminating surface,such as with front illuminated photodiode arrays. U.S. Pat. Nos.6,510,195 and 6,426,991 attempt to disclose a top-surface photodiodearray. However, these disclosures fail to provide sufficient teachingsto inform one of ordinary skill in the art how to manufacture suchmodified top-surface photodiode arrays.

Despite attempts to improve the overall performance characteristics ofphotodiode arrays and their individual diode units, within detectionsystems, photodiode arrays capable of reducing crosstalk while beingless susceptible to radiation damage are still needed. Additionally,there is need for a semiconductor circuit and an economically feasibledesign and fabrication method so that it is capable of improving thespatial resolution of detectors integrated therein.

SUMMARY OF THE INVENTION

The present invention is directed toward a detector structure, detectorarrays, a method of detecting incident radiation, and a method ofmanufacturing the detectors. The present invention comprises severalembodiments that provide for reduced radiation damage susceptibility,decreased affects of cross-talk, and increased flexibility inapplication. The present invention comprises a plurality of front sideilluminated photodiodes, optionally organized in the form of an array,with both the anode and cathode contact pads on the back side. The frontside illuminated, back side contact (FSL-BSC) photodiodes have superiorperformance characteristics, including less radiation damage, lesscrosstalk using a suction diode, and reliance on reasonably thin wafers.Another advantage of FSL-BSC photodiodes of the present invention isthat high density with high bandwidth applications can be effectuated.

In one embodiment, the photodiode array comprises a substrate having atleast a front side and a back side, photodiodes integrally formed in thesubstrate forming the array, a plurality of electrical contacts inelectrical communication with the back side, and a plurality of suctiondiodes positioned at selected locations within the array. Thefabrication of the array involves a masking process comprising the stepsof applying a first p+ mask on the front side and applying a second p+mask on the back side.

Preferably, the array substrate is made of n doped silicon. Alsopreferably, the substrate is encircled by a metallic ring.

In one embodiment, the photodiodes and suction diodes in the array havea front surface, back surface, and side walls where the side walls arecovered by a first insulating layer, a first conducting layer, and asecond insulating layer. The first insulating layer and/or secondinsulating layer are an oxide. The conductive layer is dopedpoly-silicon. The second insulating layer is in physical communicationwith a filler, such as undoped poly-silicon.

In one embodiment, each photodiodes has a middle layer juxtaposedbetween a front layer and a back layer. The middle layer comprises adoped material of n conductivity type. The back layer comprises a n+layer in electrical communication with a metal to form a cathode. Thefront layer comprises a doped material of p+ conductivity type. Thefront p+ layer is in electrical communication with a metal to form ananode.

In another embodiment, the present invention covers a photodiode arrayhaving a substrate with at least a front side and a back side; aplurality of photodiodes integrally formed in the substrate forming thearray wherein each photodiode has a middle layer juxtaposed between afront layer and a back layer; a plurality of electrical contacts inelectrical communication with the back side; and suction diodespositioned at selected locations within the array, wherein thefabrication of said array involves a masking process comprising thesteps of applying a first p+ mask on said front side and applying asecond p+ mask on said back side. In this embodiment, the middle layercomprises a doped material of p conductivity type, the back layercomprises a p+ layer in electrical communication with a metal to form aanode, and the front layer comprises a doped material of n+ conductivitytype.

The array is preferably manufactured by using a start material, such asa round sliced wafer, subjected to a standard mask oxidation processthat results in layers of SiO₂ on both front and back surfaces of thewafer. A n+ layer is formed through selective diffusion of n+ dopants.Prior to n+ diffusion on the back side of the wafer, the SiO₂ sublayeris selectively etched on the back side to ensure certain regions retainthe SiO₂ sublayer.

After the etching has been selectively performed, the regions, which aredevoid of the protective the SiO₂ layer, are subjected to a controlledn+ diffusion resulting in the formation of shallow n+ regions on theback side of the wafer. Once the n+ diffusion on the back side of thewafer is complete, a p+ fishbone mask is applied on the front side ofthe wafer and a p+ mask is applied on the back side. Alternatively, afishbone mask need not be used and, instead, a full diffusion approachmay be applied. The front side of the wafer, coated with the SiO₂ layeris preferably subjected to selective etching, utilizing the p+ fishbonemask to ensure certain regions retain the SiO₂ layer while others remaindevoid of it.

Holes are laser cut within the wafer using a hole cutting technique,such as laser cutting. The formation of holes within the wafer substrateis followed by boron diffusion and the concurrent p+ doping of theopening areas and diffusion of boron onto the walls of the holes. Holesare formed by the laser beam emitted from the laser scribing device suchthat they extend through the wafer, across its thickness in entirety,and to the back side of the wafer. The holes serve as contact holes usedfor making an electrical connection between a front surface p+ layer anda back surface electrical contact.

Once contact holes have been cut, open areas and sidewalls of the holesare doped with a material of selected conductivity type, such as n-typeor p-type. At least a portion of the SiO₂ layer is stripped off and ananti-reflective (AR) coating layer is deposited on the wafer. This isfollowed by the growth of a layer of SiO₂ via a standard oxidationprocess.

The front side of the wafer comprises AR coating and the back sidecomprises a grown oxide SiO₂ layer. A contact window masking, followedby etching of the contact window oxide on the back side of the wafer, isperformed. An n+ ring is etched at the periphery of the wafer. The backside of the wafer is metallized using an alloy of aluminum-nickel-gold(Al—Ni—Au), after which metal masking and etching is performed on theback side of the wafer.

BRIEF DESCRIPTION OF THE DRAWINGS

These and other features and advantages of the present invention will beappreciated, as they become better understood by reference to thefollowing detailed description when considered in connection with theaccompanying drawings:

FIG. 1 a is a cross sectional view of one embodiment of a silicon waferformed in accordance with the present invention;

FIG. 1 b is a side perspective view of cross-sectional detail ‘A’ fromFIG. 1 a;

FIG. 2 a is a top perspective view of one embodiment of a photodiodearray formed in accordance with the present invention;

FIG. 2 b is a side perspective view of cross-sectional detail ‘B’ fromFIG. 2 a;

FIG. 3 a is a top view of one embodiment of the photodiodes of thepresent invention;

FIG. 3 b is a top perspective view of area detail ‘B’ from FIG. 3 a;

FIG. 4 a is a bottom view of one embodiment of the photodiodes of thepresent invention;

FIG. 4 b is a perspective view of area detail ‘B’ from FIG. 4 a;

FIG. 5 a is a side perspective view of one embodiment of the presentinvention;

FIG. 5 b is a side perspective view of area detail ‘C’ from FIG. 5 a;

FIG. 6 a depicts a side planar view of a first set of steps in theformation of photodiodes of the present invention;

FIG. 6 b depicts a side planar view of a second set of steps in theformation of photodiodes of the present invention;

FIG. 6 c depicts a side planar view of a third set of steps in theformation of photodiodes of the present invention; and

FIG. 6 d depicts a side planar view of a photodiode of the presentinvention.

DESCRIPTION OF THE INVENTION

The present invention is directed toward a detector structure, detectorarrays, a method of detecting incident-radiation, and a method ofmanufacturing the detectors. The present invention comprises severalembodiments that provide for reduced radiation damage susceptibility,decreased affects of cross-talk, and increased flexibility inapplication. Various modifications to the disclosed embodiments will bereadily apparent to those of ordinary skill in the art, and thedisclosure set forth herein may be applicable to other embodiments andapplications without departing from the spirit and scope of the presentinvention and the claims hereto appended. Thus, the present invention isnot intended to be limited to the embodiments described, but is to beaccorded the broadest scope consistent with the disclosure set forthherein.

In one embodiment, the present invention comprises a plurality of frontside illuminated photodiodes, optionally organized in the form of anarray, with both the anode and cathode contact pads on the back side.The front side illuminated, back side contact (FSL-BSC) photodiodes havesuperior performance characteristics, including less radiation damage,less crosstalk using a suction diode, and reliance on reasonably thinwafers.

Referring now to FIG. 1 a, a cross sectional view of a silicon wafer 100a formed in accordance with the present invention is shown. A pluralityof photodiode sections 102 a, 101 a are formed within the silicon wafer100 a. While it is preferred that the wafer substrate be comprised ofsilicon, one of ordinary skill in the art would appreciate that anysuitable semiconductor material, which can be processed in accordancewith the processing steps of the present invention, may be used.Although only one complete diode element 102 a is illustrated in FIG. 1a, it is understood that a typical array or matrix of such diodeelements would comprise a plurality of such diode elements. A person ofordinary skill would appreciate that the number of photodiodesincorporated in the semiconductor device is not limited to a specificnumber and can be adjusted to suit varied operational specifications.The encircled area “A” demarcates a portion of the photodiode array 100a and, more specifically, photodiode 102 a.

Shown in FIG. 1 b is a detailed side perspective of the cross sectionalarea circled in FIG. 1 a and labeled as “A”. Within wafer 100 b is adiode 101 b having an active region juxtaposed between a p+ layer 102 band a n+ layer 103 b. The p+ layer 102 b is positioned proximate to thefront facing surface of the diode element whereas the n+ layer 103 b ispositioned proximate to the back facing surface. The two layers 102 b,103 b are spaced apart by a distance almost equal to, and slightly lessthan, the thickness of the wafer 100 b. Preferably, the silicon wafer100 b is of a thickness at or about 175 micron. The present inventionpreferably uses a wafer having thickness in the range of 125 micron to300 micron where the conventional wafer thickness is generally 400micron. The n+ layer 103 b is in electrical communication with metallicarea, region, or pad to form a back side cathode 104 b. The p+ layer 102b is in electrical communication, preferably at a plurality of points,with a metallic area, region, or pad to form a front surface anode 105b. The front surface anode 105 b is in electrical communication with aconductive conduit that leads from the front surface anode 105 b to aback side anode 106 b.

To bring the contacts from the front side to the back side holes aremade through the wafer by means of laser cutting technique or silicondry etching technique. Therefore, the front side and back side of eachphotodiode 101 b are in electrical communication via a connectionregion. The connection region is generated by the insertion of holes,voids, or vias between photodiode regions and the use of conductive andinsulating material to fill those vias, thereby enabling electricalcommunication between a front side p+ layer and a backside p+anode whilestill maintaining electrical isolation between the photodiode activeregions.

A connection region is formed by forming holes between active regions ofeach photodiode 101 b and within the wafer 100 b. A first oxideinsulation layer 107 b is formed on the surface of the sidewalls of theholes, thereby forming a first and innermost insulation layer, relativeto the photodiode active regions. A conductive layer 108 b is depositedover the first oxide insulation layer 107 b and serves as the electricalconduit to enable electrical communication between the p+ layer 102 band back side anode 106 b. For example, and by no way of limitation, itis preferred that the conductive layer 108 b be comprised of dopedpoly-silicon. Doped poly-silicon can withstand high temperatureprocessing, can be deposited conformally using chemical vapor depositionmethods, forms an effective ohmic contact, and resists corrosion.

A second oxide insulation layer 109 b is deposited atop the conductivelayer 108 b thereby forming an outermost insulating layer separating theactive regions of the adjacent diode elements 101 b. The innermostinsulating layer 107 b, conductive layer 108 b, and outermost insulatinglayer 109 b (collectively referred to herein as a tri-layer) are formedon each side of the sidewalls of the holes separating the photodiodeactive regions. A void area or region exists between a first tri-layer,formed on the sidewall of a first photodiode region and a secondtri-layer, formed on the sidewall of a second photodiode region. Thevoid region is preferably filled with undoped poly-silicon 110 b.

A different schematic view of the FSL-BSC photodiode is shown in FIGS. 2a and 2 b. Square boxes represent diode elements 201 a within thephotodiode array 200 a. The photodiode array 200 a is arranged in theform of a matrix with over 320 diode elements 201 a on the silicon wafer202 a. Although an array of a limited number of diode elements 201 a isillustrated in FIG. 2 a, it is understood that an array or matrix ofdiode elements falling within the scope of the present invention mayhave any number of diode elements. A person of ordinary skill wouldappreciate that the number of photodiodes incorporated in the siliconwafer is not limited to the aforesaid number and can be adjusted to suitvaried operational specifications.

In one embodiment, an exemplary photodiode array 200 a possesses thefollowing characteristics: pitch length between two adjacent diodeelements 201 a of 1.4083 mm, a length of the silicon wafer 202 a atapproximately 21.8520 mm, and a breadth of the silicon wafer 202 a atapproximately 22.4028 mm. The area labeled as “B” demarcates a portionof the silicon wafer 202 a, which is presented in further detail in FIG.2 b.

The facets marked “A”, “B”, and “C” depict a plurality ofcross-sectional views of the diode elements 201 b, when sliced viaplanes that are normal (i.e. perpendicular) to their top surface. Forpurposes of describing an exemplary embodiment and not by way oflimitation, A1 represents the internal diameter of the void regionbetween the two tri-layers, A2 represents the thickness of the wafer 200b, A3 represents external diameter of the cap which covers the two frontside anode contacts, two tri-layers, and void region between twoadjacent diodes, and A4 represents an exposed front surface area ofdiode element 201 b. In one embodiment, the diode array possesses thefollowing characteristics: A1 is at or about 0.175 mm; A2 is at or about0.050 mm; A3 is at or about 0.150 mm; and A4 is at or about 1.000 mm. Itmust be noted here that the above dimensional characteristics can bemodified to suit changing requirements.

FIGS. 3 a and 3 b show top views of photodiodes of the presentinvention. Within the diode array 300 a, active regions 305 a of thediode elements 303 a serve to provide surfaces onto which lightimpinges. Interconnections between diode elements 303 a are made throughback surface contacts (not shown) located in approximate verticalalignment with central areas 302 a. Wire interconnections 311 a arepreferably minimized. Preferably, wire interconnections are made at theback of the diode array 300 a and are made available for creatingelectrical connections with external circuits, such as printed circuitboards (PCBs) and other devices. The dotted circle, labeled as “A”,demarcates a portion of the photodiode array 300 a, whose magnified viewis given in FIG. 3 b. The section view “A—A” is shown in FIG. 3 b.

Referring to FIGS. 4 a and 4 b, a bottom view of one embodiment of aphotodiode of the present invention is shown. A silicon wafer 400 a isenclosed by a ring 402 a made of suitable metal. The silicon underneathmetal ring 402 a is heavily doped with an impurity of selectedconductivity type, either n-type or p-type. For example, and by no wayof limitation, a n+ metal ring is utilized to surround the silicon wafer400 a in accordance with the principles of the present invention.

At each of four corners of the silicon wafer 400 a is a set of diodeelements 403 a comprised of four diode elements 404 a and a centralsuction diode 405 a. Although only four suction diodes 405 a and a 16×16array of diodes 404 a are shown, it is understood that a typical arraymay have additional diode elements at a plurality of positions invarious other arrangements, other than those detailed herein.

Suction diodes 405 a absorb tailing current and thereby assist inreducing cross-talk between individual diodes 404 a. Typically,photodiode arrays may be formed as one- or two-dimensional arrays ofaligned photodiodes, or, for optical shaft encoders, a circular orsemicircular arrangement of diodes. In similar situations, wherepossible arrangements of photodiodes include, but are not limited to,one-dimensional, circular, and semicircular types, the total number ofsuction diodes may vary according to the need. The dotted circle labeledas “B” is further detailed in FIG. 4 b.

Referring to FIG. 4 b, an insulating layer 406 b, such as silicondioxide, covers the back surface of the silicon wafer 400 b. The metalring 402 b, entirely surrounding the edge of the silicon wafer 400 a,comprises a lateral extension which is in physical communication withthe suction diode 405 b.

Areas C and D, provided in an exploded view form within Figure B, depictdetailed views of individual diode element 401 b and suction diode 405b. Area “C” shows an active photodiode region comprising a metal layer404 b layered atop a n+ layer 407 b. A p+ layer 408 b is layered atopthe metal layer 404 b and forms a p+ pad as an individual pixelelectronic contact for diode element 401 b. A contact layer 409 b isformed on the p+ layer 408 b. In one embodiment, the individual diodeelement 401 b has the following specifications: diameter of the contacthole 0.125 mm, area of the n+ layer 407 b 0.2025 mm², area of the metallayer 404 b 0.09 mm², and area of the contact layer 409 b 0.0625 mm².The construction of the suction diode, shown in Area “D”, issubstantially the same as active photodiode region of Area “C”.

Referring to FIGS. 5 a and 5 b, side perspective views of one embodimentof the present invention are illustrated. In one embodiment, thephotodiode array 500 a comprises a wafer 501 a having a length at orabout 22.4028 mm and a breadth at or about 21.8520 mm. The substantiallysquare elements represent individual diode elements 502 a, within thearray 500 a, and the center circles represent the contact areas. Thearea labeled as “C” is shown in greater detail in FIG. 5 b.

Referring to FIG. 5 b, facet A is the cross-section of individual diodeelement 501 b, when sectioned via a plane normal to the top surface ofthe diode element 501 b and positioned across the diameter of the hole502 b. Facet B depicts the sidewall of diode element 501 b. A p+ layereddoped region 503 b surrounds holes 502 b and certain other portions 506b extending radially outwards along horizontal x- and vertical y-axesfrom the holes 502 b on the upper surface of the wafer 500 b.Alternatively, another embodiment of the present invention can have a p+layered doped region surrounding holes and certain other portionsextending along a horizontal x-axes only. it is possible to haveFurther, a silicon dioxide ring grown on the doped region 503 b forms acylindrical wall for the holes 502 b. The lower end of the holes 502 bare covered by an oxide layer 505 b formed by the controlled oxidationof the back side of the wafer 500 b. The bottom surface of the diode 501b is coated with an oxide layer 507 b. Another n+ layer 508 b isdiffused into the wafer 500 b. It should be noted that the abovedescription is merely illustrative of the present invention and not astatement about the only applicability of the present invention. Aperson of ordinary skill in the art would appreciate that the novelaspects of the present invention can be implemented in other ways aswell.

It should be noted that the present invention discloses a preferredapproach to manufacturing the diodes disclosed herein. The conductivelayer, situated between the two insulating layers, cannot be depositedusing any process known in the art. Specifically, ion implantation orimpurity diffusion is not an effective approach to creating a conductivelayer atop an insulating layer. Forming a conductive layer using metals,as some prior art references may have suggested, is also not aneffective approach because it is difficult to create a continuous metallayer from the front side, through the hole, and to the backside withoutcreating voids or discontinuities. Furthermore, using metals can resultin the creation of non-planar device surfaces. Maintaining waferplanarity is critical in device processing and assembly. Additionally,in certain devices, the holes are filled by a single insulating layerbetween which a conductive material is placed. While possible to fillthe entire hole with molten conductive material, such devices are oftensubjected to high dark leakage current.

In light of the above described challenges in producing photodiodes,provided below are details of how photodiodes of the present inventionare preferably manufactured. The manufacturing process will beillustrated with reference to FIGS. 6 a through 6 c.

Referring to FIG. 6 a, section view A—A (1) depicts a cross-section ofthe start material. In one embodiment, the start material is a roundsliced wafer 600 a made of a suitable semiconductor material. Forexample, and by no way of limitation, silicon may be utilized inaccordance with the principles of the present invention. In oneembodiment, the wafer or semiconductor device 600 a possesses thefollowing specifications: round slice wafer diameter 100 mm, resistivity800–1200 Ωcm, thickness 275 μm, and double side polish. The abovespecifications are not limiting and may be modified to suit the design,fabrication and functional requirements suggested herein.

Typically, a wafer, if unpolished, can have a rough texture and may notexactly conform to parameters, such as surface flatness, thicknessspecifications etc. Therefore, it is preferred that the wafer 600 a hasa double-side polish. Additionally, before further fabrication steps aretaken, the polished wafer 600 a is subjected to a standard maskoxidation process that results in layers 601 a of SiO₂ on both front andback surfaces of the wafer 600 a. The tasks of polishing and standardmask oxidation are known to those of ordinary skill in the art havingthe benefit of this disclosure and, consequently, will not be furtherdetailed herein.

As shown in section view A—A (2) of FIG. 6 a, a n+ layer is formedthrough selective diffusion of n+ dopants. Prior to n+ diffusion on theback side of the wafer 600 a, the SiO₂ sublayer 601 a is selectivelyetched on the back side to ensure certain regions, such as area 612 a,retain the SiO₂ sublayer. The process of selective etching and diffusionis well known in the prior art.

After the etching has been selectively performed, the regions, which aredevoid of the protective the SiO₂ layer, are subjected to a controlledn+ diffusion resulting in the formation of shallow n+ regions 615 a onthe back side of the wafer 600 a. There are many different approachesavailable in the prior art to carry out this diffusion process and thechoice of the diffusion method is dependent on various factors, such asthe diffusion coefficient of the dopant, permissible error in diffusiondepth, and diffusion source.

Referring to section view A—A(3) of FIG. 6 a, once the n+ diffusion onthe back side of the wafer 600 a is complete, a p+ fishbone (ornon-fishbone) mask is applied on the front side of the wafer 600 a and ap+ mask is applied on the back side. Alternatively, a full diffusionapproach may be applied, instead of a fishbone mask. The front side ofthe wafer 600 a, coated with the SiO₂ layer 601 a is preferablysubjected to selective etching, utilizing the p+ fishbone mask to ensurecertain regions, such as 616 a, retain the SiO₂ layer while othersremain devoid of it. This is achieved via any suitable masking techniqueincluding, but not limited to, p+ fishbone, followed by selectiveetching.

In a preferred embodiment, p+ fishbone masking is used and preferablyinvolves the following steps. First, a photographic mask, possessing thedesired fishbone pattern or grid, is produced. In general, photomasksare high precision plates containing microscopic images of electroniccircuits. They are made from flat pieces of quartz or glass with a layerof chrome on one side. Etched in the chrome is a portion of anelectronic circuit design. The circuit design on the mask is alsoreferred to as the geometry of the mask.

More specifically, fishbone patterns or grids possess a tightly coupledarchitecture, thereby facilitating better geometry for a sensor array.The dies are arranged in rows and columns on the mask. For example, thismay typically be a chromium pattern produced on a glass plate inaccordance with the principles of the present invention. Otherpractically appropriate patterns and masking techniques could be used inthe present invention without departing from the spirit and scope of theinvention. U.S. Pat. Nos. 6,426,991 and 3,760,385 are herebyincorporated by reference.

Referring to FIG. 6 b, holes are laser cut within the wafer. Theformation of holes within the wafer substrate is followed by borondiffusion and the concurrent p+ doping of the opening areas anddiffusion of boron onto the walls of the holes. Methods used to formholes in substrates comprise, but are not limited to, reactive ionetching, photo patterning, and laser-based techniques, such as laserablation, laser micromachining, and laser scribing. Lasers offerconsiderable flexibility and precision focus, thereby making it aneffective means for forming small diameter holes, such as micro-holeshaving diameter of the order of approximately 125 μm or less. Preferredapparatuses, methods or systems perform laser-scribing via aYttrium-Aluminum-Garnet (YAG) solid state laser (Q switched or pulsed),for example Neodymium (Nd:YAG) laser, Erbium (Er:YAG) laser or Holmium(Ho:YAG) laser, operating at a suitable wavelength to formmicro-structures, such as trenches, kerfs, or holes. In one preferredembodiment, to form the holes, a Nd:YAG laser having a 1.06 μm emittedbeam wavelength and an electrical efficiency of 2%–4% is used inconjunction with a mechanism for adjusting the position of awafer-holding chuck.

Referring to section view A—A (3) of FIG. 6 a, prior to undergoing laserscribing, wafer 600 a is preferably held in position for scribing by avacuum chuck (not shown). It will be appreciated, however, that othertypes of article-holding devices may be used within the spirit and scopeof the present invention. The wafer 600 a has a plurality of SiO₂formations 616 a and discontinuous n+ layers 615 a.

Referring now to FIG. 6 b, regions 601 b enclosed within pairs of dottedlines, as illustrated in section view A—A (4), represent the portion ofthe wafer 600 b where cutting, via the preferred laser scribingapparatus, is conducted to form the contact holes. The aperture of thelaser device used and the focal distance of the cutting beam determinethe diameter of hole. Preferably, the diameter of holes 601 b is at orabout 125 μm. A person of ordinary skill would appreciate that thespecifications of the holes, in terms of diameter and depth, are notrestricted to the aforesaid specifications and can be adjusted to suitvaried economical, technical or operational specifications.

Holes 601 b are formed by the laser beam emitted from the laser scribingdevice such that they extend through the wafer 600 b, across itsthickness in entirety, and to the back side of the wafer 600 b. Theholes 601 b serve as contact holes used for making an electricalconnection between a front surface p+ layer and a back surfaceelectrical contact.

Referring to section view A—A (5) of FIG. 6 b, once contact holes 601 bhave been cut, open areas and sidewalls of the holes 601 b are dopedwith a material of selected conductivity type, such as n-type or p-type.In one embodiment, the p+ doping layers are formed at various regionsindicated therein, as p+ suction diode (p+ S.D.) 602 b, p+ back side (p+B.S.) 603 b, and p+ active pixel (p+ A.P.) 604 b, respectively. In oneembodiment, the doping process possesses the following specifications: adopant Boron (B), a dopant conductivity type p+, a sidewall targetjunction depth of approximately 1 to 2 micron, and a dopant source BBr₃.Target junction depths, as specified in the specifications, can beachieved by the use of boron diffusion techniques though there are otherapproaches available in the prior art.

As shown in section view A—A (6) of FIG. 6 c, at least a portion of theSiO₂ layer is stripped off and an anti-reflective (AR) coating layer 602c is deposited on the wafer 600 c. This is followed by the growth of alayer of SiO₂ via a standard oxidation process. Preferably, theprocess-related specifications are as follows: a layer thickness of 2900angstroms at a rate of 3 λ/4 @540 nm if a fishbone structure is used. Ifa non-fishbone structure is used, a layer thickness of at or about 950to 1000 angstroms is the preferred specification.

Referring to section view A—A (7) of FIG. 6 c, the front side of thewafer 600 c comprises AR coating 602 c and the back side comprises agrown oxide SiO₂ layer. A contact window masking, followed by etching ofthe contact window oxide on the back side of the wafer 600 c, isperformed. An n+ ring is etched at the periphery of the wafer. The backside of the wafer 600 c is metallized using an alloy ofaluminum-nickel-gold (Al—Ni—Au), after which metal masking and etchingis performed on the back side of the wafer 600 c.

The above discussion is aimed towards providing a preferred embodimentincorporating the novel aspects of the present invention and it shouldbe understood that the foregoing illustration is not the onlyapplication where the present invention can be reduced down to practice.The present invention can be suitably modified to incorporate otherpossible embodiments as well. The scope of the invention is definedsolely by the accompanying claims and within the scope of the claims;the present invention can be employed in various other situations. Forexample, other device-to-device isolation, active are patterning, activearea reduction, reduction of crosstalk, formation of electrical contactsvia through holes, and reduction of radiation damage techniques could beemployed while still staying within the scope of the present invention.

1. A photodiode array comprising: a substrate having at least a frontside and a back side; a plurality of photodiodes integrally formed inthe substrate forming the said array; a plurality of electrical contactsin electrical communication with said back side; and a plurality ofsuction diodes positioned at selected locations within the array,wherein the fabrication of said array involves a masking processcomprising the steps of: applying a first p+ mask on said front side andapplying a second p+ mask on said back side.
 2. The array of claim 1,wherein said substrate is made of n doped silicon.
 3. The array of claim1, wherein the substrate is encircled by a metallic ring.
 4. The arrayof claim 3, wherein silicon underneath the metal ring is doped with animpurity of a selected conductivity type.
 5. The array of claim 1,wherein each of said plurality of photodiodes and suction diodes have afront surface, back surface, and side walls and wherein said side wallsare covered by a first insulating layer, a first conducting layer, and asecond insulating layer.
 6. The array of claim 5 wherein the firstinsulating layer is an oxide.
 7. The array of claim 5 wherein the secondinsulating layer is an oxide.
 8. The array of claim 5 wherein theconductive layer is doped poly-silicon.
 9. The array of claim 5 whereinthe second insulating layer is in physical communication with a filler.10. The array of claim 9 wherein the filler is undoped poly-silicon. 11.The array of claim 1 wherein each of said photodiodes has a middle layerjuxtaposed between a front layer and a back layer.
 12. The array ofclaim 11 wherein said middle layer comprises a doped material of nconductivity type.
 13. The array of claim 11 wherein said back layercomprises an n+ layer in electrical communication with a metal to form acathode.
 14. The array of claim 11 wherein said front layer comprises adoped material of p+ conductivity type.
 15. The array of claim 14wherein front p+ layer is in electrical communication with a metal toform an anode.
 16. A photodiode comprising: a substrate having a frontside and a back side; a front layer; a back layer; and a detectingregion juxtaposed between said front layer and said back layer; whereinsaid photodiode is adjacent to a connection region having a firstinsulating layer, a first conducting layer, and a second insulatinglayer and wherein said photodiode is made using a process comprising thesteps of: applying a first p+ mask on said front side; applying a secondp+ mask on said back side; and forming said connection region using ahole cutting technique.
 17. The photodiode of claim 16 wherein saidprocess for making the photodiode further comprises the step ofdiffusing boron.
 18. The photodiode of claim 16 wherein said process formaking the photodiode further comprises the step of performing a p+doping of the connection region.
 19. The photodiode of claim 16 whereinsaid each of said connection region has a diameter of at or about 125micron.
 20. The photodiode of claim 16 wherein at least one of saidconnection regions functions as a conduit for forming an electricalconnection between said first layer and a back surface electricalcontact.
 21. The photodiode of claim 16 wherein said front layercomprises a doped material of p+ conductivity type and said front p+layer is in electrical communication with a metal to form an anode. 22.A photodiode array comprising: a substrate having at least a front sideand a back side; a plurality of photodiodes integrally formed in thesubstrate forming the said array wherein each of said photodiodes has amiddle layer juxtaposed between a front layer and a back layer; aplurality of electrical contacts in electrical communication with saidback side; and a plurality of suction diodes positioned at selectedlocations within the array, wherein the fabrication of said arrayinvolves a masking process comprising the steps of: applying a first n+mask on said front side and applying a second n+ mask on said back side.23. The array of claim 22 wherein said middle layer comprises a dopedmaterial of p conductivity type.
 24. The array of claim 22 wherein saidback layer comprises a p+ layer in electrical communication with a metalto form a anode.
 25. The array of claim 22 wherein said front layercomprises a doped material of n+ conductivity type.
 26. The array ofclaim 25 wherein front n+ layer is in electrical communication with ametal to form a cathode.
 27. The array of claim 22, wherein thesubstrate is encircled by a metallic ring.
 28. The array of claim 27,wherein silicon underneath the metal ring is doped with an impurity of aselected conductivity type.
 29. The array of claim 22, wherein each ofsaid plurality of photodiodes and suction diodes have side walls whereinsaid side walls are covered by a first insulating layer, a firstconducting layer, and a second insulating layer.
 30. The array of claim29 wherein the first insulating layer is an oxide.
 31. The array ofclaim 29 wherein the second insulating layer is an oxide.
 32. The arrayof claim 29 wherein the conductive layer is doped polysilicon.